Kt. Kohlmannvonplaten et Wh. Bruenger, ELECTRON-BEAM-INDUCED ETCHING OF RESIST WITH WATER-VAPOR AS THE ETCHING MEDIUM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4262-4266
H2O vapor as the etching medium has been investigated for electron bea
m induced etching of an organic resist. The aim was the determination
of the dependencies on the process parameters. The etch rate increases
with decreasing beam energy and increasing H2O vapor flux (i.e., mole
cules per time and area). At 5 keV beam energy, the achieved etch rate
is 55 nm/min. By lowering the beam energy to 1 keV (maximum of the se
condary electron yield) and increasing the scan speed (approximately 1
-5 MHz), a pronounced rise to the etch rate is expected. (C) 1996 Amer
ican Vacuum Society.