REPLICATION OF NEAR 0.1-MU-M HOLE PATTERNS BY USING X-RAY-LITHOGRAPHY

The feasibility of x-ray lithography in applying device process was st udied through fabrication of a small circuit consisting of experimenta l stacked film and contact holes numbering about Ik with replicated si zes from 0.6 to 0.085 mu m. To resolve fine contact holes, in-house ch emically amplified positive resist was used by employing a high contra st post-exposure-bake condition. By measuring the resistance and yield s of prepared circuits, we have evaluated the reliability of the circu its. High yield of larger than 0.9 was obtained for contact holes larg er than 0.15 mu m, and prepared circuits were found to be feasible dow n to 0.085 mu m. (C) 1996 American Vacuum Society.