GAINP INGAAS/GAAS GRADED BARRIER MODFET GROWN BY OMVPE - DESIGN, FABRICATION, AND DEVICE RESULTS/

GaxIn1-xP/GayIn1-yAs/GaAs Modulation Doped Field Effect Transistors (M ODFET's) with a pseudomorphic barrier and a pseudomorphic channel were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE). This material s ystem is promising for advanced MODFET's on GaAs for high frequency an d power applications, because of the large discontinuity in the conduc tion band, advantages in the processing and the capability to increase the energy separation between the bottom of the conduction band and F ermi level by compositionally grading the barriers. Record 2-Dimension al Electron Gas (2-DEG) carrier densities of 3.1 . 10(12) cm(-2) for s ingle-sided MODFET's were measured. Measured RF power at 10 GHz for 0. 25 mu m devices was greater than or equal to 0.4 W/mm. For the first t ime cutoff frequencies f(T) and f(max) exceeding 105 and 188 GHz, resp ectively, were obtained for this material system with 0.1 mu m gate-le ngth MODFET's.