X-RAY PHOTOELECTRON-SPECTROSCOPY CHARACTERIZATION OF RADIO-FREQUENCY REACTIVELY SPUTTERED CARBON NITRIDE THIN-FILMS

Citation
S. Kumar et al., X-RAY PHOTOELECTRON-SPECTROSCOPY CHARACTERIZATION OF RADIO-FREQUENCY REACTIVELY SPUTTERED CARBON NITRIDE THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(5), 1996, pp. 2687-2692
Citations number
33
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
14
Issue
5
Year of publication
1996
Pages
2687 - 2692
Database
ISI
SICI code
0734-2101(1996)14:5<2687:XPCORR>2.0.ZU;2-Q
Abstract
Carbon nitride thin films prepared by radio frequency reactive sputter ing of graphite in pure nitrogen plasma have been characterized by x-r ay photoelectron spectroscopy (XPS) for probing the chemical bonding i n the films. The multiple binding energy values obtained for the C 1s and N 1s photoelectrons in the film suggest that both the C and N atom s exhibit at least three types of chemical states, manifestative of di fferent types of the C-N bonding present in the material. The presence of theoretically predicted beta-C3N4 phase in our C-N films has been suggested on the basis of XPS and optical data. (C) 1996 American Vacu um Society.