A SIMULATION-MODEL FOR THICKNESS PROFILE OF THE FILM DEPOSITED USING PLANAR CIRCULAR TYPE MAGNETRON SPUTTERING SOURCES

Authors
HONG S KIM E BAE BS NO K LIM SC WOO SG KOH YB
Citation
S. Hong et al., A SIMULATION-MODEL FOR THICKNESS PROFILE OF THE FILM DEPOSITED USING PLANAR CIRCULAR TYPE MAGNETRON SPUTTERING SOURCES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(5), 1996, pp. 2721-2727
Citations number
16
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
14
Issue
5
Year of publication
1996
Pages
2721 - 2727
Database
ISI
SICI code
0734-2101(1996)14:5<2721:ASFTPO>2.0.ZU;2-J
Abstract
The thickness profile of the film deposited by planar circular-type ma gnetron is simulated considering the relationship between magnetic fie ld profile and target erosion rate. The model is confirmed by the meas urement of the film thickness profiles of the Cr films deposited in th is study. It is found that the model is applicable to the magnetron sp uttering process at low gas pressure. Furthermore, it can be used to p redict the thickness profile of the films deposited by magnetron sputt ering with various shapes of magnets. (C) 1996 American Vacuum Society .