SILICON(001) SURFACE AFTER ANNEALING IN HYDROGEN AMBIENT

We investigated Si surfaces after annealing in a H-2 ambient using att enuated total reflection in the infrared region, reflective high energ y electron diffraction, Auger electron spectroscopy, and atomic force microscopy. We found that at all H-2 pressures the surface dangling bo nds formed dimers that. were related to two-domain (2x1) or c(4x2) rec onstructed surfaces. H-2 was adsorbed on the reconstructed surface and terminated a pair of dangling bonds that did not form dimers. H-2 ads orption was limited by the reaction between H-2 and the dangling bonds on the surface. The activation energy of H-2 adsorption was 0.4-0.6 e V higher than that of H-2 desorption. The surface on which H atoms wer e adsorbed and dimers were formed was inert, which kept the surface cl ean. We also found that the H-2 annealed surfaces were influenced by s urface roughness and contaminants including oxygen and carbon. (C) 199 6 American Vacuum Society.