BIS-PHOSPHINO-METHANE - A NEW PRECURSOR FOR METALORGANIC VAPOR-PHASE EPITAXY OF PHOSPHIDES

Authors
GEIGER M OTTENWALDER D SCHOLZ F GLANZ M RECKER C WINTERFELD J SCHUMANN H
Citation
M. Geiger et al., BIS-PHOSPHINO-METHANE - A NEW PRECURSOR FOR METALORGANIC VAPOR-PHASE EPITAXY OF PHOSPHIDES, Journal of crystal growth, 169(4), 1996, pp. 625-628
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
169
Issue
4
Year of publication
1996
Pages
625 - 628
Database
ISI
SICI code
0022-0248(1996)169:4<625:B-ANPF>2.0.ZU;2-X
Abstract
We have synthesized bis-phosphino-methane (BPM) as a new precursor for the metalorganic vapor phase epitaxy of P containing III-V compound s emiconductors. We measured a favorable vapor pressure of 65 hPa at 17 degrees C. First growth experiments resulted in InP layers with accept able properties, although this first BPM batch was not yet specially p urified.