CO-EVAPORATIVE SB DOPING AND CRYSTALLINE QUALITY IN SI MOLECULAR-BEAMEPITAXY

The co-evaporative Sb doping in Si molecular beam epitaxy was studied with the emphasis on the crystalline quality of the films. By using re flective high energy electron diffraction, cross-sectional transmissio n electron microscopy, spread resistance profiling and secondary ion m ass spectroscopy, it was found that doping growths at high substrate t emperatures (greater than or equal to 500 degrees C) would degrade the crystalline quality of the films. This degradation was attributed to Sb segregation. In contrast, the films would retain good quality in do ping growths at low substrate temperatures (< 500 degrees C) due to su ppression of the segregation. Growth at low substrate temperature (350 -400 degrees C) plus post-annealing is recommended for growing Sb-dope d Si films.