GROWTH OF (FEXMG1-X)(2)SIO4 SINGLE-CRYSTALS BY THE DOUBLE-PASS FLOATING-ZONE METHOD

Citation
Tl. Tsai et al., GROWTH OF (FEXMG1-X)(2)SIO4 SINGLE-CRYSTALS BY THE DOUBLE-PASS FLOATING-ZONE METHOD, Journal of crystal growth, 169(4), 1996, pp. 764-772
Citations number
18
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
169
Issue
4
Year of publication
1996
Pages
764 - 772
Database
ISI
SICI code
0022-0248(1996)169:4<764:GO(SBT>2.0.ZU;2-K
Abstract
Good quality olivine single crystals, (FexMg1-x)(2)SiO4, have been suc cessfully grown by the floating zone method using an image furnace. Th e double pass floating zone method was utilized to grow crystals with uniform composition along the growth axis. Chemical analyses by electr on microprobe confirmed that the crystals were homogeneous in composit ion along the growth direction over the entire length of the boule. Th e primary crystal defects observed were bubbles. Precipitates, such as iron oxide and silica-rich phases were only occasionally found in iro n-rich olivine crystals. An after-heater, either active or passive, wa s placed just below the freezing interface to control the interface sh ape and reduce the thermal gradient, enabling the growth of crack-free single crystals.