HETEROJUNCTION DIODES IN 3C-SIC SI SYSTEM GROWN BY REACTIVE MAGNETRONSPUTTERING - EFFECTS OF GROWTH TEMPERATURE ON DIODE RECTIFICATION ANDBREAKDOWN/

3C-SiC/Si heterojunction diodes were prepared by reactive magnetron sp uttering of pure Si in CH4-Ar discharge on Si(111) substrates kept at temperatures (T-s) ranging from 800 to 1000 degrees C. A good diode re ctification process started for films grown at T-s less than or equal to 900 degrees C. Heterojunction diodes grown at T-s = 850 degrees C s howed the best performance with a saturation current density of 2.4 x 10(-4) A cm(-2). Diode reverse breakdown was obtained at a voltage of -110 V. The doping concentration (N-d) of the 3C-SiC films was calcula ted fram 1/C-2 vs V plot to be 3 x 10(15) cm(-3). Band offset values o btained were -0.27 and 1.35 eV for the conduction and valence band, re spectively. X-ray diffraction analysis revealed the film grown at T-s = 850 degrees C to be single-phase 3C-SiC. The full width at half maxi mum of the 3C-SiC(111) peak was only 0.25 degree. Cross-sectional tran smission electron microscopy showed the film to be highly (111)-orient ed with an epitaxial columnar structure of double positioning domain b oundaries.