POTENTIAL NANOELECTRONIC INTEGRATED-CIRCUIT TECHNOLOGIES

Citation
J. Randall et al., POTENTIAL NANOELECTRONIC INTEGRATED-CIRCUIT TECHNOLOGIES, Microelectronic engineering, 32(1-4), 1996, pp. 15-30
Citations number
28
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
32
Issue
1-4
Year of publication
1996
Pages
15 - 30
Database
ISI
SICI code
0167-9317(1996)32:1-4<15:PNIT>2.0.ZU;2-I
Abstract
We discuss the opportunities for Nanoelectronic devices based on reson ant tunneling to impact integrated circuit (IC) technology. We believe that resonant tunneling diodes (RTDs) integrated with conventional co mpound semiconductor transistors will be the first opportunity for pro ducts. The development of silicon heterostructure technology should pe rmit RTDs to augment CMOS ICs by permitting novel circuit applications that will have speed and functional density advantages. In our view, the most promising avenue for downscaling to exist beyond CMOS will be Quantum Dot IC technology. Numerous challenges for nanotechnology exi st along each step of these paths.