ELECTRON-BEAM LITHOGRAPHY - RESOLUTION LIMITS

Citation
An. Broers et al., ELECTRON-BEAM LITHOGRAPHY - RESOLUTION LIMITS, Microelectronic engineering, 32(1-4), 1996, pp. 131-142
Citations number
25
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
32
Issue
1-4
Year of publication
1996
Pages
131 - 142
Database
ISI
SICI code
0167-9317(1996)32:1-4<131:EL-RL>2.0.ZU;2-R
Abstract
Electron beam lithography is generally accepted to have the highest pr actical resolution capability. In this paper the state of the art in t erms of resolution is reviewed. This covers conventional resists such as PMMA, contamination resist, inorganic resists and damage processes. Some insights into the resolution limiting factors are given although the precise limitations still remain unclear. Consideration is also g iven as to the best measure of resolution and it is suggested that the minimum line spacing is a more appropriate and less subjective measur e than minimum achievable feature size.