PROXIMAL PROBE LITHOGRAPHY AND SURFACE MODIFICATION

Citation
Crk. Marrian et Es. Snow, PROXIMAL PROBE LITHOGRAPHY AND SURFACE MODIFICATION, Microelectronic engineering, 32(1-4), 1996, pp. 173-189
Citations number
52
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
32
Issue
1-4
Year of publication
1996
Pages
173 - 189
Database
ISI
SICI code
0167-9317(1996)32:1-4<173:PPLASM>2.0.ZU;2-R
Abstract
The advantage of a low voltage approach to lithography and surface mod ification is that a more spatially localized energy deposition can be achieved than with a focused high energy charged particle beam. Proxim al probes, such as the scanning tunnelling microscope or atomic force microscope with a conductive tip, are convenient ways to realize this approach. We summarize here research performed over the past few years at the Naval Research Laboratory directed towards materials studies a nd lithographic fabrication of structures and devices using proximal p robes.