THE ELECTRON-BEAM AND X-RAY LITHOGRAPHIC PERFORMANCE OF THE HIGH-RESOLUTION CAMP AND ARCH FAMILY OF CHEMICALLY AMPLIFIED RESISTS

The electron-beam and x-ray (lambda centered at 1.4 nm) lithographic p erformance of the single and multi-component chemically amplified (CA) resists termed CAMP and ARCH were evaluated for their applicability t o the patterning of <100nm structures. Copolymers of 4-t-butoxycarbony loxystyrene and sulfur dioxide have been shown to generate acid upon e xposure and act as sensitive single component positive acting CA resis ts. The second generation CAMP-6 resist exhibited similar behavior but both were plagued by excessive film loss after the process post expos ure bake (FEB) step and limited resolution to 150 nm. Reduction in fil m loss and improvement in exposure contrast was observed with the mult i-component CA resist ARCH. Process control optimization and compatibi lity of the resist to the environments of the x-ray and electron-beam exposure tool enabled the reliable patterning of 100 nm features when exposed to x-rays and 75 nm dark field and 90 nm bright field line and space features when exposed to the same dose of 50 keV electrons.