INFLUENCE OF KINK EFFECT ON NOISE MEASUREMENTS IN INP SUBSTRATE PHEMTS AT MICROWAVE-FREQUENCIES

Authors
ROUQUETTE P GASQUET D BARBEROUSSE F DERAEDT W BAEYENS Y
Citation
P. Rouquette et al., INFLUENCE OF KINK EFFECT ON NOISE MEASUREMENTS IN INP SUBSTRATE PHEMTS AT MICROWAVE-FREQUENCIES, Solid-state electronics, 39(10), 1996, pp. 1423-1426
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
10
Year of publication
1996
Pages
1423 - 1426
Database
ISI
SICI code
0038-1101(1996)39:10<1423:IOKEON>2.0.ZU;2-T
Abstract
We present d.c. and r.f. measurements in AlInAs/GaInAs/InP high electr on mobility transistors with different gate length. First we observed a kink effect in the I-V characteristics. Next we have extracted the d ifferent parameters of the r.f. equivalent circuit from scattering par ameters. Finally we have deduced the current spectral density and time constants from the noise measurements. These results confirm the pres ence of an excess noise contribution related to impact ionization in t he channel, which affects low noise application seven at microwave fre quencies. Copyright (C) 1996 Elsevier Science Ltd