Aa. Ptashchenko et Fa. Ptashchenko, EXCESS POLARIZATION OF THE SPONTANEOUS EMISSION IN LASER HETEROSTRUCTURES, Solid-state electronics, 39(10), 1996, pp. 1495-1500
''Excess'' polarization of the spontaneous emission (EPSE) of diode la
sers at low injection levels, being more pronounced in degraded specim
ens, has been observed. A model of EPSE is proposed, involving tunnel
radiative recombination of electrons and light holes at inhomogeneitie
s of the p-n junction. Separating EPSE from the polarization effect ca
used by elastic deformation enables the strain in the active region of
laser heterostructures to be determined. Copyright (C) 1996 Elsevier
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