EXCESS POLARIZATION OF THE SPONTANEOUS EMISSION IN LASER HETEROSTRUCTURES

Authors
PTASHCHENKO AA PTASHCHENKO FA
Citation
Aa. Ptashchenko et Fa. Ptashchenko, EXCESS POLARIZATION OF THE SPONTANEOUS EMISSION IN LASER HETEROSTRUCTURES, Solid-state electronics, 39(10), 1996, pp. 1495-1500
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
10
Year of publication
1996
Pages
1495 - 1500
Database
ISI
SICI code
0038-1101(1996)39:10<1495:EPOTSE>2.0.ZU;2-I
Abstract
''Excess'' polarization of the spontaneous emission (EPSE) of diode la sers at low injection levels, being more pronounced in degraded specim ens, has been observed. A model of EPSE is proposed, involving tunnel radiative recombination of electrons and light holes at inhomogeneitie s of the p-n junction. Separating EPSE from the polarization effect ca used by elastic deformation enables the strain in the active region of laser heterostructures to be determined. Copyright (C) 1996 Elsevier Science Ltd