PLASMA-INDUCED DEPOSITION OF TITANIUM NITRIDE FROM TICL4 IN A DIRECT-CURRENT GLOW-DISCHARGE - CONTROL OF THE CHLORINE CONTENT AND GAS-PHASENUCLEATION

Titanium nitride thin films have been deposited from TiCl4, N-2, and H -2 in a low-pressure glow discharge at temperatures of less than or eq ual to 500 degrees C, which are compatible with most applications. Bas ed on our earlier work on the effect of the plasma parameters on the c hemical pseudoequilibrium in this and in similar systems, the chlorine content could be reduced to less than 2 at %. Suppression of the posi tive column reduced the gas-phase reaction within the reactor volume a nd the concomitant homogeneous nucleation. Dense, very hard films with golden color could be deposited on various substrates including silic on and steel.