DOPING OF GE WITH PHOSPHORUS IN THE PRESENCE OF ND

Ge crystals doped with P were grown in the presence of Nd. The equilib rium coefficient of P distribution, k(0) = (3.9 +/- 1.6) x 10(-2), and the diffusion coefficient of P in the Nd-doped Ge melt, D = (1.6 +/- 0.2) x 10(-6) cm(2)/s, were determined from the axial profiles of elec trically active P in ingots grown under identical stirring conditions but at various pulling rates. The small value of D is attributed to di ffusion of large-sized neodymium orthophosphate molecules, accompanied by activation of P at the liquid/solid interface.