THERMALLY ACTIVATED AND INJECTION CURRENTS IN (GA2S3)(0.93)(EU2O3)(0.07)CE SINGLE-CRYSTALS

Citation
Ob. Tagiev et Ga. Kasimova, THERMALLY ACTIVATED AND INJECTION CURRENTS IN (GA2S3)(0.93)(EU2O3)(0.07)CE SINGLE-CRYSTALS, Inorganic materials, 32(10), 1996, pp. 1041-1043
Citations number
9
Categorie Soggetti
Material Science
Journal title
ISSN journal
00201685
Volume
32
Issue
10
Year of publication
1996
Pages
1041 - 1043
Database
ISI
SICI code
0020-1685(1996)32:10<1041:TAAICI>2.0.ZU;2-A
Abstract
Measurements of thermally activated and injection currents in (Ga2S3)( 1-x)(Eu2O3)(x):Ce single crystals were used to assess the activation e nergy and concentration of traps as well as the equilibrium carrier co ncentration. The mechanism of recombination is discussed.