REACTIVE ION ETCHING OF GASB AND GAALSB USING SICL4

Reactive ion etching of GaSb and GaAlSb using pure SiCl4 was investiga ted. Etching rate and etching profiles were characterized as functions of working pressure, chamber background pressure, flow rate, and powe r density. The etching rate and profile of metal organic chemical vapo r deposited-grown GaSb and GaAlSb thin films are strongly dependent on background pressure and applied power. These interesting characterist ics can be applied to control selective or nonselective etchings for d evice fabrication. Etching profiles exhibited a high degree of anisotr opy and smooth surface morphologies. (C) 1996 American Vacuum Society.