WET SILYLATION AND OXYGEN PLASMA DEVELOPMENT OF PHOTORESISTS - A MATURE AND VERSATILE LITHOGRAPHIC PROCESS FOR MICROELECTRONICS AND MICROFABRICATION

A near-surface imaging process using wet silylation and oxygen plasma development is described. New characterization techniques of films spu n on wafers are presented for: (a) quantitative Si concentration deter mination using proton nuclear magnetic resonance spectroscopy (H), and (b) glass transition and/or flow temperature determination (T-g) of t he silylated photoresist using thermomechanical analysis. H-line, I-Li ne, and deep ultraviolet lithography (at 248 nm) results are presented , while extension to 193 nm Lithography is discussed. Very anisotropic and high aspect ratio pattern transfer to Si, with fluorine-only cont aining plasmas is demonstrated. Possible applications are discussed. ( C) 1996 American Vacuum Society.