ULTRAFINE PATTERN X-RAY MASK FABRICATED USING THE SIDEWALL METHOD

Authors
XIA AD FU SJ HONG YL TIAN YC HU YG ZHANG XY LU J LI FQ
Citation
Ad. Xia et al., ULTRAFINE PATTERN X-RAY MASK FABRICATED USING THE SIDEWALL METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3391-3392
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
5
Year of publication
1996
Pages
3391 - 3392
Database
ISI
SICI code
1071-1023(1996)14:5<3391:UPXMFU>2.0.ZU;2-B
Abstract
A 50 nm line x-ray mask was fabricated by using a sidewall process. Th e gold film which was taken as an absorber was deposited by ion-beam s puttering onto the very vertical sidewall surfaces of a polyimide grat ing. It was demonstrated that the smoothness and the small sidewall an gle play an important role in the fabrication of the higher resolution x-ray mask using sidewall methods. (C) 1996 American Vacuum Society.