ANISOTROPY IN RESISTIVITY OF MONX FILMS AT 4.2 K

Resistance uniformity of MoNx film resistors is necessary for stable o peration of Josephson large scale integrated circuits. Electrical and crystallographic characteristics of MoNx films deposited by the sputte ring method have been studied. We have found the resistivity of a MoNx film at 4.2 K depends on the current direction in the film plane. Sca nning electron microscopy observations show crystal grains are elongat ed in the film plane. The shape of the Mo target and the configuration of the substrate influence longitudinal axes of most grains which ten d to orient in the same direction. The resistivity of the MoNx film fo r a current parallel to the longitudinal directions of most grains is lower than that for a current perpendicular to the longitudinal direct ions. Therefore, the resistivity anisotropy of the MoNx films is mainl y due to the anisotropy of the grain boundaries. (C) 1996 American Vac uum Society.