SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION/

Authors
FOURRE H DIETTE F CAPPY A
Citation
H. Fourre et al., SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3400-3402
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
14
Issue
5
Year of publication
1996
Pages
3400 - 3402
Database
ISI
SICI code
1071-1023(1996)14:5<3400:SWEOLI>2.0.ZU;2-P
Abstract
A selectivity study of the etching of lattice matched (LM) InCaAs/InAl As on InP and metamorphic (MM) InGaAs/InAlAs on GaAs in succinic acid: hydrogen peroxide solutions is reported. Selectivities as high as 70 and 1030 are? respectively, obtained for the LM and MM InGaAs on InAlA s. Observations and measurements with an atomic force microscope of na rrow recess and under-resist etch on LM InP materials are also present ed. The ability of these solutions for fabrication of InGaAs/InAlAs he terojunction field effect transistors is discussed. (C) 1996 American Vacuum Society.