FLUX-ENHANCED GROWTH OF MULTISOURCE PHYSICAL VAPOR-DEPOSITED SRGA2S4-CE,CL ELECTROLUMINESCENT THIN-FILMS

The flux-assisted deposition of the active phosphor layer in the highe st efficiency, true blue (CIE coordinates of x = 0.14/y = 0.12) electr oluminescent (EL) devices based on SrGa2S4:Ce,Cl is described. Luminan ces of 78 cd/m(2) and luminous efficiencies of 0.017 lm/W at a transfe rred charge of 1 mu C/cm(2) with 1 kHz/50 mu s bipolar square wave exc itation were achieved. The influence of the coevaporated fluxes LiF an d NaF in addition to the elements Sr, Ga, S, and the activator startin g material CeCl3, on film growth is examined. The relation between Ga/ Sr, S/Sr, flux/Sr rates, and substrate temperature (T-Sub) on phase ho mogeneity due to flux, crystal quality, film thickness, and device per formance is described.