INFLUENCE OF THE THERMAL HISTORY OF MELTS ON THE FORMATION OF GROWN-IN DEFECTS IN SILICON

We have investigated the influence of time-dependent changes of melt p roperties on the formation of grown-in defects in silicon single cryst als grown by the Czochralski method. It is found that the density of g rown-in defects increases if the crystal is pulled immediately after m elting. The results indicate that the change in the state of melts can influence the formation of grown-in defects in silicon single crystal s.