INVESTIGATION OF TRAPPED CHARGE IN OXIDES UNDER FOWLER-NORDHEIM STRESS USING LOW-BIAS CONDITIONS

Authors
DUANE R MARTIN A ODONOVAN P HURLEY P OSULLIVAN P MATHEWSON A
Citation
R. Duane et al., INVESTIGATION OF TRAPPED CHARGE IN OXIDES UNDER FOWLER-NORDHEIM STRESS USING LOW-BIAS CONDITIONS, Microelectronics and reliability, 36(11-12), 1996, pp. 1623-1626
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
11-12
Year of publication
1996
Pages
1623 - 1626
Database
ISI
SICI code
0026-2714(1996)36:11-12<1623:IOTCIO>2.0.ZU;2-B
Abstract
This work describes the influence of low current pulses during high cu rrent stress on the trapping properties of thin silicon dioxide layers . The determination of the trapped oxide charge during Fowler-Nordheim stress from low current steps is discussed. It is shown that low bias steps are not a reliable indicator of the amount of trapped charge in the oxide due to trapping of additional charges during this measureme nt period. Copyright (C) 1996 Elsevier Science Ltd