NEW EXPERIMENTAL FINDINGS ON HOT-CARRIER EFFECTS IN DEEP-SUBMICROMETER SURFACE CHANNEL PMOS

The correlation between gate current and substrate current in surface channel(SC) PMOS with effective channel length down to 0.15 mu m is in vestigated within the general framework of the lucky-electron model. I t is found that the impact ionization rate increases, but the device d egradation is not serious in deep submicrometer PMOS. To extend the lu cky-electron model to deep submicrometer regime, we empirically model the effective pinch-off length as a function of the gate length and th e gate bias voltage. SCIHE is suggested as the possible physical mecha nism for the enhanced impact ionization and the gate current reduction . Copyright (C) 1996 Elsevier Science Ltd