MEASUREMENT AND MODELING OF A NEW WIDTH DEPENDENCE OF NMOSFET DEGRADATION

NMOS transistors with widths between 1.2 mu m and 10 mu m and length o f 0.8 mu m have been stressed for up to 5000 hours. Investigating the threshold voltage shift a new width dependence of degradation has been measured, analysed and modeled by a simple theory. Because of the inc reasing degradation of NMOSFETs with decreasing width this effect will be more and more important for small-channel LOGOS transistors. Copyr ight (C) 1996 Elsevier Science Ltd