RESISTANCE CHANGES DUE TO CU TRANSPORT AND PRECIPITATION DURING ELECTROMIGRATION IN SUBMICROMETRIC AL-0.5-PERCENT-CU LINES

Citation
A. Scorzoni et al., RESISTANCE CHANGES DUE TO CU TRANSPORT AND PRECIPITATION DURING ELECTROMIGRATION IN SUBMICROMETRIC AL-0.5-PERCENT-CU LINES, Microelectronics and reliability, 36(11-12), 1996, pp. 1691-1694
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00262714
Volume
36
Issue
11-12
Year of publication
1996
Pages
1691 - 1694
Database
ISI
SICI code
0026-2714(1996)36:11-12<1691:RCDTCT>2.0.ZU;2-C
Abstract
In this work we describe. the resistance changes due to Cu transport a nd precipitation during electromigration in 0.5 mu m wide Al-0.5%Cu li nes. A wafer-level, high resolution resistometric technique: allowed u s to detect significant resistance drops during the initial phase of t he electromigration test. TEM microstructural analysis and SEM observa tions were also performed. Large CuAl2 aggregates were observed in the lines that underwent a high stressing current. The transport and coal escence of Cu atoms explains fairly well the observed resistance drops , that are likely to be due to a decrease of the scattering events ass ociated with tiny precipitates. Copyright (C) 1996 Elsevier Science Lt d