PULSED THERMAL CHARACTERIZATION OF A REVERSE-BIASED PN-JUNCTION FOR ESD HBM SIMULATION

Authors
WOLF H GIESER H WILKENING W
Citation
H. Wolf et al., PULSED THERMAL CHARACTERIZATION OF A REVERSE-BIASED PN-JUNCTION FOR ESD HBM SIMULATION, Microelectronics and reliability, 36(11-12), 1996, pp. 1711-1714
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
11-12
Year of publication
1996
Pages
1711 - 1714
Database
ISI
SICI code
0026-2714(1996)36:11-12<1711:PTCOAR>2.0.ZU;2-A
Abstract
Compact electro-thermal simulation of an ESD event in a semiconductor structure requires proper definition and calibration of the equivalent thermal circuit. We demonstrate an approach to determine the device t emperature during square pulse stress on the basis of the temperature dependence of the avalanche breakdown voltage. This global temperature is relevant to the transient IV-characteristic. The simulation accura cy of an HEM-stressed diode is improved significantly. Copyright (C) 1 996 Elsevier Science Ltd