REPRODUCIBILITY OF FIELD FAILURES BY ESD MODELS - COMPARISON OF HBM, SOCKETED CDM ON NON-SOCKETED CDM

Two types of IC's with field failures explainable only by ESD damage c ould be identified. A comparative study with failures caused by HEM, s ocketed CDM and non-socketed CDM clearly shows, that the failure type of one IC could only be simulated with CDM stress. Socketed as well as non-socketed CDM reproduced exactly the same gate oxide damage at one edge of a specific input transistor as it is known by field failure a nalysis. Although similar threshold voltages are not expected for both kinds of CDMs because of their different discharge pulse forms, in th is case they are found to be almost equal. Copyright (C) 1996 Elsevier Science Ltd