SIMULATION STUDY FOR THE CDM ESD BEHAVIOR OF THE GROUNDED-GATE NMOS

Authors
RUSS C VERHAEGE K BOCK K GROESENEKEN G MAES HE
Citation
C. Russ et al., SIMULATION STUDY FOR THE CDM ESD BEHAVIOR OF THE GROUNDED-GATE NMOS, Microelectronics and reliability, 36(11-12), 1996, pp. 1739-1742
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
11-12
Year of publication
1996
Pages
1739 - 1742
Database
ISI
SICI code
0026-2714(1996)36:11-12<1739:SSFTCE>2.0.ZU;2-F
Abstract
The parasitic bipolar transistor inherent to grounded gate nMOSts is m odelled accounting for the specific conditions applied by CDM ESD stre ss. The impact of the gate length on the CDM-specific bipolar saturati on mode is addressed. The different operation modes occurring during C DM ESD stress translate to self-heating which explains the observed te st results. Copyright (C) 1996 Elsevier Science Ltd