RISETIME EFFECTS OF HBM AND SQUARE PULSES ON THE FAILURE THRESHOLDS OF GGNMOS-TRANSISTORS

For 0.8 mu m-GGNMOS transistors a lack of correlation between Human Bo dy Model ESD testers conforming to current standards and transmission line pulsing (TLP) was observed. The paper demonstrates the influence of the initial 5%-40% risetime of TLP testers on the failure threshold s and failure signatures of transistors with single and multiple finge rs. Copyright (C) 1996 Elsevier Science Ltd