EXPERIMENTAL VALIDATION OF MECHANICAL-STRESS MODELS BY MICRO-RAMAN SPECTROSCOPY

Authors
DEWOLF I POZZAT G PINARDI K HOWARD DJ IGNAT M JAIN SC MAES HE
Citation
I. Dewolf et al., EXPERIMENTAL VALIDATION OF MECHANICAL-STRESS MODELS BY MICRO-RAMAN SPECTROSCOPY, Microelectronics and reliability, 36(11-12), 1996, pp. 1751-1754
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
11-12
Year of publication
1996
Pages
1751 - 1754
Database
ISI
SICI code
0026-2714(1996)36:11-12<1751:EVOMMB>2.0.ZU;2-X
Abstract
It is shown that micro-Raman spectroscopy offers a unique tool for the validation of stress models for microelectronics devices. Starting fr om an analytical or numerical model that describes the variation of lo cal stress in a device, the corresponding Raman shift is calculated an d compared with the data. In this way feed-back is given to the model. This technique is demonstrated for stripes (Si3N4, CoSi2, W) on a Si substrate, but can be applied to any device where Raman data can be ob tained. Copyright (C) 1996 Elsevier Science Ltd