NANOSCOPIC EVALUATION OF SEMICONDUCTOR PROPERTIES BY SCANNING PROBE MICROSCOPIES

By application of new or modified techniques of scanning tunneling and scanning force microscopes a comprehensive analysis of semiconductor materials and devices becomes feasible in conjunction with a detailed topological correlation. In this manner properties like electrical and thermal conductivity or mechanical properties can be imaged with nano meter resolution as well as local variations of diffusions length and locations of space charge regions. As most of these modes can be appli ed within one experiment a maximum of information can be obtained. Fin ally, a combination of scanning force and scanning electron microscope enables a direct comparison with the well-established electron beam m ethods. Copyright (C) 1996 Elsevier Science Ltd