RELIABILITY OF A FOCUSED ION-BEAM REPAIR ON DIGITAL CMOS CIRCUITS

Citation
R. Vancamp et al., RELIABILITY OF A FOCUSED ION-BEAM REPAIR ON DIGITAL CMOS CIRCUITS, Microelectronics and reliability, 36(11-12), 1996, pp. 1787-1790
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00262714
Volume
36
Issue
11-12
Year of publication
1996
Pages
1787 - 1790
Database
ISI
SICI code
0026-2714(1996)36:11-12<1787:ROAFIR>2.0.ZU;2-H
Abstract
The usefulness of FIB technology for device modification is commonly r ecognized in the industry. Yet, very little is known concerning the re liability of these circuit changes. This paper presents the reliabilit y assessment of a ''standard'' FIB repair on digital CMOS circuits. Th e overall conclusion is positive : the lifetime of a ''standard'' FIB repair is found to be more than a few months, which is largely suffici ent for prototyping. Copyright (C) 1996 Elsevier Science Ltd