PULSED STRESS RELIABILITY INVESTIGATIONS OF SCHOTTKY DIODES AND HBTS

Authors
SCHUSSLER M KROZER V BOCK KH BRANDT M VECCI L LOSI R HARTNAGEL HL
Citation
M. Schussler et al., PULSED STRESS RELIABILITY INVESTIGATIONS OF SCHOTTKY DIODES AND HBTS, Microelectronics and reliability, 36(11-12), 1996, pp. 1907-1910
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
11-12
Year of publication
1996
Pages
1907 - 1910
Database
ISI
SICI code
0026-2714(1996)36:11-12<1907:PSRIOS>2.0.ZU;2-V
Abstract
Experimental results from stressing Schottky diodes and HBTs employing TLP (Transmission Line Pulses) with 100ns duration time and ESD pulse s following the Human Body Model are compared. Based on optical and el ectrical characterisation the same failure mechanisms seem to occur in dicating the strong degree of relationship between these two methods. Device failures are explained by thermally activated interface and bul k reactions, field enhanced material transport and hot charge carrier effects. Copyright (C) 1996 Elsevier Science Ltd