ETCHING OF DEEP V-GROOVE CHANNELS ON A (001)INP SUBSTRATE AND REGROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
LESTRA A GABORIT F GAUMONTGOARIN E GOLDSTEIN L LESTERLIN D PAGNODROSSIAUX P
Citation
A. Lestra et al., ETCHING OF DEEP V-GROOVE CHANNELS ON A (001)INP SUBSTRATE AND REGROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 167(3-4), 1996, pp. 446-451
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
167
Issue
3-4
Year of publication
1996
Pages
446 - 451
Database
ISI
SICI code
0022-0248(1996)167:3-4<446:EODVCO>2.0.ZU;2-M
Abstract
We have investigated the regrowth of InP by gas source molecular beam epitaxy on patterned substrates with different V-grooved channels. The etching process has been adapted for deep V-grooves with narrow chann els on (001) InP substrates. Three kinds of etch profiles which exhibi t {111}B, {111}A and {112}A facets have been obtained. The regrown InP shows different planation effects depending on the facets of the V-gr oove. Planation effects are enhanced for B-type facets whereas the pro file is left unchanged for A-type facets.