STRUCTURAL DEFECTS IN ALPHA-SIC SINGLE-CRYSTALS GROWN BY THE MODIFIED-LELY METHOD

Structural characterization of single crystalline alpha-SiC has been c onducted by X-ray topography. Crystals were grown in the [<000(1)over bar>] and the [<1(1)over bar 00>] directions by the modified-Lely meth od, and wafers perpendicular and parallel to the growth directions sli ced from the grown crystals were examined by transmission topographs o f the tang method. The crystals grown in the [<000(1)over bar>] and th e [<1(1)over bar 00>] directions showed a significant difference in bo th types and densities of crystal defects-Each growth direction exhibi ted a peculiar defect formation, and the topography revealed that most of the defects were formed at the very initial stage of growth.