DIFFUSE INTERFACE MODEL OF NUCLEATION

Citation
L. Granasy et al., DIFFUSE INTERFACE MODEL OF NUCLEATION, Journal of crystal growth, 167(3-4), 1996, pp. 756-765
Citations number
66
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
167
Issue
3-4
Year of publication
1996
Pages
756 - 765
Database
ISI
SICI code
0022-0248(1996)167:3-4<756:DIMON>2.0.ZU;2-Y
Abstract
A diffuse interface theory of nucleation proposed recently for vapor c ondensation and crystal nucleation is compared with experiments and fi eld-theoretical models of nucleation. Without adjustable parameters th e theory gives an improved description of condensation experiments on non-polar and weakly polar substances. Cluster dynamics calculations a re performed for homogeneous and heterogeneous crystal nucleation. Exp eriments on homogeneously nucleating oxide glasses indicate that a tem perature-independent interface thickness is a reasonable assumption fo r even deep undercooling. This offers a unique possibility for disting uishing homogeneous and bulk heterogeneous nucleation processes.