PREPARATION OF CUINSE2 FILMS BY HOT-WALL EVAPORATION TECHNIQUE

Cu-In-Se films have been deposited by a hot-wall evaporation technique using CuCl and In2Se3 as source materials. The composition of films w as severely dependent on the substrate temperature. In the present stu dy, near-stoichiometric CuInSe2 films were deposited on the substrate heated to about 440 degrees C when CuCl and In2Se3 were respectively s ublimed from two sources heated to 260 and 560 degrees C. X-ray diffra ction measurement detected no additional second phase and the film exh ibited low resistivity and p-type conduction.