SUPPRESSION OF TWINS IN GAAS-LAYERS GROWN ON A GAP(111)B SUBSTRATE BYLIQUID-PHASE EPITAXY

Heteroepitaxial growth of GaAs on GaP(111)B was demonstrated by liquid phase epitaxy. In order to suppress the generation of rotational twin s, initial saturation conditions of Ga-As solution contacting with a G aP substrate were investigated at 800 degrees C. Supersaturated and un dersaturated solutions caused a number of twins in the grown GaAs laye r, while saturated solution led only a few percents in volume. It was concluded that near equilibrium contact is effective to reduce the twi ns.