INHERITANCE OF ZINCBLENDE STRUCTURE FROM 3C-SIC SI(001) SUBSTRATE IN GROWTH OF GAN BY MOCVD/

GaN has been grown on 3C-SiC/Si(001) at temperatures from 600 to 800 d egrees C by low pressure MOCVD using TMGa and NH3. The grown films wer e characterized by X-ray diffraction signals from the zinc-blende GaN( 002) and the wurtzite GaN(0002) planes. An X-ray diffraction signal de tected at 36.8 degrees indicated the wurtzite GaN(<10(1)over bar 1>) p lane. The growth of the wurtzite GaN was suppressed by increasing the growth temperature. The annealing of the thick polycrystalline GaN in NH3 ambient at 800 degrees C was found to cause the atomic displacemen t and sublimation. Zinc-blende GaN with suppressed wurtzite domain was obtained on 3C-SiC/Si(001) at 800 degrees C by inserting a thin polyc rystalline GaN buffer layer deposited at 600 degrees C.