ANALYSIS OF THE MECHANISM OF DIFFUSION-LIMITED OXYGEN PRECIPITATION IN CZ-SILICON

Authors
STANCULESCU F MOLDOVEANU M BOTEA M
Citation
F. Stanculescu et al., ANALYSIS OF THE MECHANISM OF DIFFUSION-LIMITED OXYGEN PRECIPITATION IN CZ-SILICON, Journal of crystal growth, 166(1-4), 1996, pp. 183-188
Citations number
6
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
166
Issue
1-4
Year of publication
1996
Pages
183 - 188
Database
ISI
SICI code
0022-0248(1996)166:1-4<183:AOTMOD>2.0.ZU;2-I
Abstract
We develop models for diffusion limited oxygen precipitation. We analy ze the specific boundary conditions for the diffusion equation and we study the validity of the synchronic evolution of the precipitation ce lls. The combined model describes the simultaneously evolution of grow ing and dissolving precipitates.