F. Stanculescu et al., ANALYSIS OF THE MECHANISM OF DIFFUSION-LIMITED OXYGEN PRECIPITATION IN CZ-SILICON, Journal of crystal growth, 166(1-4), 1996, pp. 183-188
We develop models for diffusion limited oxygen precipitation. We analy
ze the specific boundary conditions for the diffusion equation and we
study the validity of the synchronic evolution of the precipitation ce
lls. The combined model describes the simultaneously evolution of grow
ing and dissolving precipitates.