CENTRIFUGAL TECHNIQUES FOR SOLUTION GROWTH OF SEMICONDUCTOR LAYERS

Two centrifugal techniques, I and II, have been applied to grow semico nductor layers in a rotating crucible. Technique I employs centrifugal forces to transport the solutions in the liquid phase epitaxial proce ss. Layers of Si and SiGe grown on 100 mm diameter Si wafers and of Ga As on GaAs substrates outlined the capability and potentialities of te chnique I. Technique II requires higher rotational frequencies of the crucible. The higher centrifugal forces available in this technique in fluence the local distribution of the solute in the solvent. Locally i ncreased solute concentration in the solution allows us to prepare mul ticrystalline self-supporting and inclusion-free films. or to prepare thick homo- and hetero-epitaxial LPE layers even on dissimilar substra tes. We describe, in this paper, experimental results obtained by grow ing SiGe layers on 100 mm single-crystalline Si wafers using centrifug al technique I. We describe also the first results obtained by centrif ugal technique II, and thereby focus on self-supporting multicrystalli ne sheets of Si, SiGe, and GaAs, and on multicrystalline Ge layers gro wn on sintered porous quartz substrates.