CHARACTERIZATION OF CDTE-CL CRYSTALS GROWN UNDER MICROGRAVITY CONDITIONS BY TIME-DEPENDENT CHARGE MEASUREMENTS (TDCM)

Citation
C. Eiche et al., CHARACTERIZATION OF CDTE-CL CRYSTALS GROWN UNDER MICROGRAVITY CONDITIONS BY TIME-DEPENDENT CHARGE MEASUREMENTS (TDCM), Journal of crystal growth, 166(1-4), 1996, pp. 245-250
Citations number
13
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
166
Issue
1-4
Year of publication
1996
Pages
245 - 250
Database
ISI
SICI code
0022-0248(1996)166:1-4<245:COCCGU>2.0.ZU;2-T
Abstract
CdTe:Cl crystals were grown from the liquid and from the vapour phase under microgravity( mu g) conditions on board the unmanned EURECA I mi ssion. The resistivity distribution of the grown crystals was measured by time dependent charge measurement (TDCM). Photo induced current tr ansient spectroscopy (PICTS) was used to investigate the deep level pr operties. The axial resistivity distributions of the crystals grown in space differ significantly from Ig reference crystals. In the case of vapour growth, these differences can be explained by an additional la minar flow under Ig conditions. Supercooling has to be considered in g rowth from a Te zone under mu g.