SYNCHROTRON X-RAY TOPOGRAPHY OF BISMUTH SILICON-OXIDE CRYSTALS

Authors
MARTINEZLOPEZ J GONZALEZMANAS M CABALLERO MA DIEGUEZ E CAPELLE B
Citation
J. Martinezlopez et al., SYNCHROTRON X-RAY TOPOGRAPHY OF BISMUTH SILICON-OXIDE CRYSTALS, Journal of crystal growth, 166(1-4), 1996, pp. 325-328
Citations number
6
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
166
Issue
1-4
Year of publication
1996
Pages
325 - 328
Database
ISI
SICI code
0022-0248(1996)166:1-4<325:SXTOBS>2.0.ZU;2-N
Abstract
The generation and distribution of growth defects in Czochralski-grown bismuth silicon oxide (Bi12SiO20) crystals have been studied by synch rotron X-ray topography. The relationship of the paths of grown-in dis locations with the shape of the crystal-melt interface is also reporte d.