SYNCHROTRON WHITE-BEAM TOPOGRAPHIC INVESTIGATION OF CRYSTALLINE DEFECTS IN SILICON-ON-INSULATOR MATERIALS

Samples prepared by separation by implantation of oxygen (SIMOX) with dislocation densities of about 10(5) cm(-2) have been studied by synch rotron white beam X-ray diffraction topography (WET) in transmission g eometry. The threading dislocations in the top Si layer were detected and found to have Burgers vectors parallel to the [011] and to the [01 (1) over bar] directions. From moire fringes the lattice parameter dif ference between the top Si layer and the substrate was found to be abo ut 6 x 10(-8) in the surface plane.