TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INGAASP INGAP THIN-LAYER STRUCTURE GROWN BY LIQUID-PHASE EPITAXY/

Authors
TANAKA S ISHIKAWA T HIBINO M
Citation
S. Tanaka et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INGAASP INGAP THIN-LAYER STRUCTURE GROWN BY LIQUID-PHASE EPITAXY/, Journal of crystal growth, 166(1-4), 1996, pp. 334-338
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
166
Issue
1-4
Year of publication
1996
Pages
334 - 338
Database
ISI
SICI code
0022-0248(1996)166:1-4<334:TESOII>2.0.ZU;2-R
Abstract
Cross-sectional transmission electron microscopy observations were car ried out for InGaAsP/InGaP thin layers grown on (111)A GaAs by liquid phase epitaxy. Fine-scale periodic contrast modulation along the surfa ce was observed in epilayers irrespective of the composition. The peri od is 20-30 nm. The heterointerfaces were found to be abrupt down to t he atomic scale(i.e., similar to 1.2 nm).